On the Fermi level pinning in as-grown GaInNAs„Sb.../GaAs quantum wells with indium content of 8%–32%
نویسندگان
چکیده
with indium content of 8%–32% R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, James S. Harris, M. Motyka, and J. Misiewicz Solid State and Photonics Laboratory, Department of Electrical Engineering, 311X CISX, Via Ortega, Stanford University, Stanford, California 94305-4075, USA Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland
منابع مشابه
Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells
A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells QWs has been proposed in this paper. This approach utilizes contactless electroreflectance CER spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well QW into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning...
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Interband transitions in GaInNAsSb/ GaAs single quantum wells ͑SQWs͒ with nominally identical nitrogen and antimony concentrations ͑2.5% N and 7% Sb͒ and varying indium concentrations ͑from 8% to 32%͒ have been investigated by contactless electroreflectance ͑CER͒. CER features related to optical transitions between the ground and excited states have been clearly observed. Energies of the QW transitions...
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